Link has been copied to clipboard
DCK30I1200HA
SiC Diode in TO247-2L | Series: SiC Schottky Diodes
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
| Property | Value |
|---|---|
VRRM (V) | 1200 |
IF(AV) | 30 |
Peak Forward Surge Current IFSM (A) | 210 |
QC (nC) | 153 |
TJ Max (°C) | 175 |
Vf (V) | 1.48 |
Configuration | Single |
AEC-Q101 Qualified | No |
- Positive temperature coefficient for safe operation and ease of paralleling
- 175°C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses compared to Si bipolar diodes
- MSL 1 rated
DCK30I1200HA Applications
- Boost diodes in PFC or DC/DC stages
- Switch-mode power supplies
- Uninterruptible power supplies
- Solar inverters
- Industrial motor drives
- Battery chargers
- High speed rectification
DCK30I1200HA Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| DCK30I1200HA | SiC Diode in TO247-2L | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.