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LSIC2SD120E20CCA

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LSIC2SD120E20CCA

SiC Schottky Diode 1200V 2x10A TO247-3L | Series: SiC Schottky Diodes
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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

PropertyValue
VRRM (V)
1200
IF(AV)
10
Peak Forward Surge Current IFSM (A)
80
QC (nC)
57
TJ Max (°C)
175
Reverse Current IR (µA)
1
Vf (V)
1.5
Configuration
Common Cathode
Qualification_Diode
Industrial
  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

LSIC2SD120E20CCA Applications

Highlights Section

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

LSIC2SD120E20CCA Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
LSIC2SD120E20CCASiC Schottky Diode 1200V 2x10A TO247-3L

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