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LSIC2SD170B50
SiC Schottky Diode 1700V 50A TO-247-2L | Series: SiC Schottky Diodes
The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings.
SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency.
This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C.
These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed.
| Property | Value |
|---|---|
VRRM (V) | 1700 |
IF(AV) | 50 |
Peak Forward Surge Current IFSM (A) | 280 |
QC (nC) | 353 |
TJ Max (°C) | 175 |
Reverse Current IR (µA) | <1 |
Vf (V) | 1.5 |
Configuration | Single |
Qualification_Diode | Industrial |
- Positive temperature coefficient
- 175°C maximum operating junction temperature
- Extremely fast, temperature-independent switching behavior
- Nearly zero reverse recovery current
- High surge capability
- Low RthJC
LSIC2SD170B50 Applications
- Boost diodes for power factor correction or dc–dc conversion
- Switch-mode power supplies
- Uninterruptible power supplies
- Solar inverters
- Industrial motor drives
- EV charging stations
LSIC2SD170B50 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LSIC2SD170B50 | SiC Schottky Diode 1700V 50A TO-247-2L | View More |
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About SiC Schottky Barrier Diodes for Power Conversion
Learn why choosing silicon-carbide diodes for rectifiers and inverters can boost efficiency, simplify paralleling, save space, and lower heat-sinking requirements.