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S6002CAS
"Sen SCR 600V, 2.0A 200µA DO214 3L " | Series: Low Power SCR up to 1200V
The S6002CASRP device offers very high di/dt capability through small die planar construction design. It is glass-passivated to ensure long term reliability and parametric stability.
| Property | Value |
|---|---|
On-State Current (Itrms) (A) | 2 |
VDRM (V) | 600 |
IGTMAX (mA) | 0.2 |
ITSM 60Hz (A) | 25 |
IDRM@VDRM 25°C (mA) | 0.005 |
VTM (V) | 1.5 |
di/dt (A/µs) | 500 |
Itav (A) | 1.2 |
tgt (µs) | 50 |
Gate Non-Trigger Voltage | 0.2 |
Non-Repetitive Surge Current ITSM 50Hz | 22.5 |
dv/dt @ 125°C (V/µs) | 250 |
Igm | 1 |
IDRM@VDRM 125°C (mA) | 0.5 |
PGAV (W) | 0.2 |
Turn-off Time (µs) | 55 |
Gate Trigger Voltage MAX | 0.8 |
Min Gate Trigger Current IGT MAX | 0.02 |
Type | Sensitive Gate |
Mount Method | Surface Mount |
IH (A) | 0.005 |
I2t | 2.5 |
- Surge capability of 25 A at 60 Hz half cycle
- High di/dt capability of 500 A/μs
- Improved turn-off time (tq) < 55 μsec
- AEC-Q101 qualified
- Sensitive gate for direct microprocessor interface
- Halogen-free and RoHS-compliant
S6002CAS Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| S6002CASRP | "Sen SCR 600V, 2.0A 200µA DO214 3L " | View More |
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