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S602ES1

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S602ES1

Sen SCR 600V 1.5A 100 µA TO92WB | Series: Low Power SCR up to 1200V
info
New 1.5Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR™ junctions are glass — passivated to ensure long term reliability and parametric stability.
PropertyValue
On-State Current (Itrms) (A)
1.5
VDRM (V)
600
IGTMAX (mA)
0.1
ITSM 60Hz (A)
15
IDRM@VDRM 25°C (mA)
0.005
VTM (V)
1.7
di/dt @ 110°C (A/µs)
50
Itav (A)
0.95
tgt (µs)
3
Non-Repetitive Surge Current ITSM 50Hz
12.5
dv/dt @ 125°C (V/µs)
25
Igm
1
IDRM@VDRM 125°C (mA)
0.5
PGAV (W)
0.1
Turn-off Time (µs)
35
Gate Trigger Voltage MAX
0.8
Peak Reverse Gate Voltage
5
Min Gate Trigger Current IGT MAX
0.015
Type
Sensitive Gate
IH (mA)
3
I2t
0.78
  • RoHS Compliant
  • Through hole and surface mount packages
  • Blocking voltage (VDRM/VRRM) capability - to 600V
  • Surge capability >15 A
  • Improved turn-off time (Tq) < 35μsec
  • Sensitive gate for direct microsprocessor interface

S602ES1 Applications

Highlights Section

  • The Sx02xS series is specifically designed for Gas Ignition applications that require high pulse surge current capability.

S602ES1 Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
S602ES1Sen SCR 600V 1.5A 100 µA TO92WB

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