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S6X8ES1

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Thyristor SxX8xSx Image

S6X8ES1

Sen SCR 600V .8A 5 ?A TO92WB | Series: Low Power SCR up to 1200V
info
New device series offers high static dv/dt and lower turn-off (Tq) sensitive SCR with its small die planar construction design. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications. All SCRs junctions are glass-passivated to ensure long term reliability and parametric stability.
PropertyValue
On-State Current (Itrms) (A)
0.8
VDRM (V)
600
IGTMAX (mA)
0.005
ITSM 60Hz (A)
10
IDRM@VDRM 25°C (mA)
0.003
VTM (V)
1.7
di/dt @ 110°C (A/µs)
50
Itav (A)
0.51
tgt (µs)
2
Non-Repetitive Surge Current ITSM 50Hz
8
dv/dt @ 125°C (V/µs)
75
Igm
1
IDRM@VDRM 125°C (mA)
0.5
PGAV (W)
0.1
Turn-off Time (µs)
30
Gate Trigger Voltage MAX
0.8
Peak Reverse Gate Voltage
5
Min Gate Trigger Current IGT MAX
0.0005
Type
Sensitive Gate
IH (A)
5
I2t
0.41
  • RoHS compliant and Halogen-free
  • Thru-hole and surface mount packages
  • Surge current capability >10 A
  • Blocking voltage ( VDRM / VRRM ) capability - up to 800 V
  • High dv/dt noise immunity
  • Improved turn-off time (tq) < 25 μsec
  • Sensitive gate for direct microprocessor interface

S6X8ES1 Applications

Highlights Section

  • The SxX8xS series is specifically designed for GFCI (Ground Fault Circuit Interrupter) and gas ignition applications.

S6X8ES1 Resources

TO-92-3L 3D Model
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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHCs) DeclarationREACH (SVHCs)Halogen FreeIPC-Material Declaration
S6X8ES1Sen SCR 600V .8A 5 ?A TO92WBRoHS9/1/2004NoYes1/1/1901
S6X8ES1APSen SCR 600V .8A 5 ?A TO92WBRoHS9/1/2004NoYes1/1/1901
S6X8ES1RPSen SCR 600V .8A 5 ?A TO92WBRoHS9/1/2004NoYes1/1/1901

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