IXYX30N170CV1 - High Voltage Series

Series: High Voltage
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Littelfuse Power Semi PLUS247 3 2Sq 1W2N 3L image
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Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system.

The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI).

Features:

  • Thin wafer XPT™ technology
  • Low on-state voltages VCE(sat)
  • Co-packed fast recovery diodes
  • Positive temperature coefficient of VCE(sat)
  • International standard size high-voltage packages

Applications:

  • Pulser circuits
  • Laser and X-ray generators
  • High-voltage power supplies
  • High-voltage test equipment
  • Capacitor discharge circuits
  • AC switches

Advantages:

  • Higher efficiency
  • Elimination of multiple series-connected devices
  • Increased reliability of power systems

Contact Power Semiconductor Support


Property (Mouseover for details) Value
Status Active
VCES - Collector-Emitter Voltage (V) 1700
Collector Current @ 25 ℃ (A) 100
VCE(sat) - Collector-Emitter Saturation Voltage (V) 4
Fall Time [Inductive Load] (ns) 95
Configuration Copack (FRED)
Package Type TO-247 PLUS
Thermal resistance [junction-case] [IGBT] (K/W) 0.16
Turn-off Energy @ 150 ℃ (mJ) 3.5
Collector Current @ 110 ℃ (A) 30
Thermal resistance [junction-case] [Diode] (K/W) 0.36
Forward Current @ 110 ℃ (A) 38

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