IXYP20N120B4 - Trench Series

Series: Trench
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Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these devices help to reduced gate driver requirements and conduction losses. They also feature reduced thermal resistance, low losses, and high current densities. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.


  • Low on-state voltages VCE(sat)
  • Optimized for medium switching frequencies 10 kHz up to 30 kHz
  • Positive thermal coefficient of VCE(sat)
  • International standard packages


  • Battery chargers
  • Power inverters
  • Power Factor Correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Welding machines


  • Ideal for high power density and high inrush currents, low loss applications
  • Hard-switching capable
  • Easy paralleling of devices
  • Reduced gate drive requirements
  • Ease of replacement and availability of isolation package
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