IXYP20N120B4 - Trench Series

Series: Trench
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Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. 

Features:

  • Low on-state voltages Vcesat
  • Optimized for medium switching frequencies 10kHz up to 30kHz
  • Positive thermal coefficient of Vcesat
  • International standard packages

Applications:

  • Battery chargers
  • Power inverters
  • Power Factor Correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Welding machines 

Advantages:

  • Ideal for high power density and high inrush currents, low loss applications
  • Hard-switching capable
  • Easy paralleling of devices
  • Reduced gate driver requirements
  • Ease of replacement and availability of isolation package
  • Low gate drive requirements
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