IXFH50N80XA - Ultra Junction X-Class Series

Series: Ultra Junction X-Class
Availability: Obsolete

Obsolete
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Littelfuse Power Semi ISO247 3 H 2Sq 1W2N 3L image
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Disclaimer Notice

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Features:

  • International Standard Package
  • High Voltage Package
  • Low RDS(ON) and QG
  • Avalanche Rated
  • Low Package Inductance

Benefits:

  • High Power Density
  • Easy to Mount
  • Space Savings

Applications:

  • Switch-Mode and Resonant-Mode Power Supplies
  • DC-DC Converters
  • PFC Circuits
  • AC and DC Motor Drives
  • Robotics and Servo Controls


Property (Mouseover for details) Value
Drain-Source Voltage (V) 800
Maximum On-Resistance @ 25 ℃ (Ohm) 0.105
Continuous Drain Current @ 25 ℃ (A) 50
Gate Charge (nC) 152
Input Capacitance, CISS (pF) 4480
Thermal resistance [junction-case] (K/W) 0.14
Configuration Single
Package Type TO-247
Typical Reverse Recovery Time (ns) 218
Power Dissipation (W) 890
Sample Request No
Partner ECAD Models IXFH50N80XA

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