CPC3982 - N-Channel Depletion-Mode MOSFETs Series

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Disclaimer Notice

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.

Features:

  • Device Normally On
  • High Breakdown Voltage
  • Low On-Resistance
  • Low VGS (off) Voltage
  • Low On-Resistance at Cold Temperatures
  • High Input Impedance
  • Low Input and Output Leakage
  • Small Package Size: SOT-23, SOT-89 & SOT-223

Applications:

  • Normally On Switches
  • Ignition Modules
  • Power Supplies
  • Telecommunications
  • Support for LITELINK Devices
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