Multi-Chip Configurations Series - 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations

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These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.


  • Silicon chip on Direct-Copper-Bond substrate
  • Fast CoolMOS™(1) power MOSFET 4th generation
  • Enhanced total power density
  • HiPerDyn™ FRED


  • Switch mode power supplies
  • Uninterruptible power supplies
  • Power factor correction (PFC)


  • Easy assembly
  • Space savings
  • High power density
  • High reliability

(1) CoolMOS™ is a trademark of Infineon Technologies AG.

Access specifications, certifications, check availability and order parts below

Catalog #VDSS (V)RDS(ON),max @ 25 ℃ (Ohm)ID, cont @ 25 ℃ (A)Gate Charge (nC)RthJC (K/W)ConfigurationPackage TypeCISS (pF)trr,typ (ns)PD (W)VISOL,RMS (V)Check StockPart DatasheetPartner ECAD ModelsStockCompare
FDM15-06KC56000.16515401.1BuckISOPLUS i4-PAC™20003902500YesPartFDM15-06KC5Check
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