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IXTT220N20X4HV
Discrete MOSFET 220A 200V X4 TO268HV | Series: X4 Class
The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at given frequency.
| Property | Value |
|---|---|
VDSS (V) | 200 |
RDS(ON),max @ 25 °C (Ω) | 0.0055 |
ID, cont @ 25 °C (A) | 220 |
Gate Charge (nC) | 157 |
RthJC (K/W) | 0.19 |
Configuration | Single |
Package Type | TO-268HV |
CISS (pF) | 12300 |
trr,typ (ns) | 140 |
PD (W) | 800 |
TJ Max (°C) | 175 |
CRSS (pF) | 5.4 |
- Low Gate Charge
- Low RDS(on)
- Low RthJC
- 175°C Operating Temperature
- High Avalanche rating (900mJ - 1J)
IXTT220N20X4HV Applications
- Switched-Mode and Resonant-Mode Power Supplies
- UPS and Inverters
- Battery circuits
- DC-DC and AC-DC Converters
- Redundant power switches
IXTT220N20X4HV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTT220N20X4HV | Discrete MOSFET 220A 200V X4 TO268HV | View More |
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