IXTY18P10T - Trench Gate Series

TO-252
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Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.

Features:

  • Fast intrinsic diode
  • Low Qg and RDSon
  • Avalanche rated
  • Extended FBSOA
  • International standard packages

Advantages:

  • Low gate charge resulting in simple drive requirement
  • High power density
  • Fast switching

Applications:

  • High-side switching
  • Load switches
  • Low voltage applications
  • High-efficiency switching power supplies
  • Inverters and battery chargers