LGB8207ATH Series - Ignition IGBT, N-Channel, 20 A, 365 V

NGB8207AB
Roll Over to Zoom

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Ideal for Coil-on-Plug and Driver-on-Coil Applications
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Gate Resistor (RG) = 70

Applications:

  • Ignition Systems

End Products:

  • Automotive

Access specifications, certifications, check availability and order parts below

Catalog #TYP BVCES@IC (V)ICmax (A)VCE(sat) (V)EAS (mJ)PDMAX
(W)
StockSamples
NGB8207ABNT4G365201.75500165CheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
NGB8207ABNT4G Ignition IGBT, N-Channel, 20 A, 365 V RoHS No 08/15/2016 PbFree No 09/12/2018 Yes
09/12/2018
If the product environmental information that you are looking for does not appear in this tab,
please complete the Product Environmental Information Request Form.