NGB8206A Series - Ignition IGBT, N-Channel, 20 A, 350 V

NGB8206A
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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)

Applications:

  • Ignition Systems
  • Direct Fuel Injection
  • Coil-on-Plug
  • Driver-on-Coil

End Products:

  • Automotive

Access specifications, certifications, check availability and order parts below

Catalog #TYP BVCES@IC (V)ICmax (A)VCE(sat) (V)EAS (mJ)PDMAX
(W)
StockSamplesCompare
NGB8206ANSL3G350201.3250150CheckOrder
NGB8206ANT4G350201.3250150CheckOrder
NGB8206ANTF4G350201.3250150CheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
NGB8206ANSL3G Ignition IGBT, N-Channel, 20 A, 350 V RoHS No 08/15/2016 PbFree No 09/12/2018 Yes
09/12/2018
NGB8206ANT4G Ignition IGBT, N-Channel, 20 A, 350 V RoHS No 11/30/2017 PbFree No 11/30/2017 Yes
11/30/2017
NGB8206ANTF4G Ignition IGBT, N-Channel, 20 A, 350 V RoHS No 08/15/2016 PbFree No 09/12/2018 CoC_RoHS9_NGB8206ANTF4G_1-4-2021 REACH209_Declaration_-Contain-_NGB8206ANTF4G_1-4-2021 Yes
09/12/2018
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