NGB15N41ACLT4G - NGx15N41 Series

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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.


  • DPAK Package Offers Smaller Footprint and Increased Board Space
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
  • Short-Circuit Withstand Capability
  • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)


  • Ignition Systems
  • Coil-on-Plug

End Products:

  • Automotive