LSIC1MO170E1000 Series - Enhancement-mode SiC MOSFET, 1700 V, 1 Ohm, N-channel

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The Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO170E1000 is rated at 1700 V, 1 Ohm in a TO-247-3L package. 

  • Optimized for high-frequency, high-efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency switching
  • Normally-off operation at all temperatures
  • Ultra-low on-resistance


  • Solar inverters
  • Switch-mode power supplies
  • UPS
  • Motor drives
  • High-voltage DC/DC converters
  • Induction heating

Access specifications, certifications, check availability and order parts below

Catalog #Voltage Rating (V)Typical On-Resistance (mOhm)Current Rating (A)Gate Charge (nC)ConfigurationPackage TypeDriving Voltages (V)Switching Energy (uJ)RoHSTJ Max (°C)Sample CapableCheck StockStockSamples