LSIC2SD120A08 Series - GEN2 SiC Schottky Diode, 1200 V, 8 A, TO-220-2L

Roll Over to Zoom

▶ Click here to request a sample

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.


  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes


  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)Peak Forward Surge Current IFSM (A)QC (nC)TechnologyReverse Current IR (µA)TJ Max (°C)Package TypeVf (V)IF(AV)ConfigurationSizeMountingRoHSPublic part (Yes/No)Data Sheet (Yes/No)Stock
LSIC2SD120A0812006547SiC Schottky Diode100175TO220-2L1.524.5SingleTO220-2LThrough HoleYesYesYesCheck