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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features:
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses compared to Si bipolar diodes
Applications:
- Boost diodes in PFC or DC/DC stages
- Switch-mode power supplies
- Uninterruptible power supplies
- Solar inverters
- Industrial motor drives
- EV charging stations
Part # |
Part Description |
RoHS |
Pb-free |
RoHS (2015/ 863/EU) Certificate |
REACH (SVHC’s) Declaration |
Halogen Free |
REACH (SVHC’s) |
LSIC2SD120A10 |
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No
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No
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