LSIC2SD120A10 - LSIC2SD120A10 Series

Series: LSIC2SD120A10
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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

Applications:

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations
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Property (Mouseover for details) Value
Max Repetitive Reverse Voltage (VRRM) (V) 1200
Peak Forward Surge Current IFSM (A) 80
QC (nC) 57
Technology SiC Schottky Diode
Reverse Current IR (µA) 100
TJ Max (°C) 175
Package Type TO220-2L
Forward Voltage Drop VF (V) 1.5
IF(AV) 28
Configuration Single
RoHS Yes
Public part (Yes/No) Yes
Data Sheet (Yes/No) Yes
ProdCategory Silicon Carbide
ProductGroup Power Semiconductors
SBU Yes
Sample Request Yes
Check Stock Yes
Partner ECAD Models LSIC2SD120A10

Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LSIC2SD120A10 1200V/10A SiC Schottky Diode TO-220-2L RoHS No PbFree No
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