LSIC2SD120D10 Series - GEN2 SiC Schottky Diode, 1200 V, 10 A, TO-263-2L

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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.


  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes


  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)IF(AV)Peak Forward Surge Current IFSM (A)QC (nC)TJ Max (°C)Package TypeTechnologyReverse Current IR (µA)StatusVf (V)ConfigurationRoHSPublic part (Yes/No)Data Sheet (Yes/No)ProdCategoryPartner ECAD ModelsStock
LSIC2SD120D101200108057175TO263-2LSiC Schottky Diode100NOT FOR NEW DESIGNS1.5SingleYesYesYesSilicon CarbideLSIC2SD120D10Check
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LSIC2SD120D10 1200V/10A SiC Schottky DiodeTO-263-2L RoHS No PbFree No
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