LSIC2SD120N80PA Series - GEN2 SiC Schottky Diode LSIC2SD120N80PA, 1200 V, 2x40 A, SOT-227B (miniBLOC)

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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes
  • Zero reverse recovery current
  • Copper base plate with AlN isolation for low thermal resistance
  • Isolation voltage: 3000 V
  • UL Recognition Pending under File E72873

Applications:

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptable power supplies
  • Industrial motor drives
  • Battery Chargers
  • High speed rectifier

Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)Forward Continuous Current IF (A)Peak Forward Surge Current IFSM (A)QC (nC)TechnologyReverse Current IR (µA)TJ Max (°C)Package TypeVf (V)ConfigurationRoHSPublic part (Yes/No)Data Sheet (Yes/No)ProdCategoryProductGroupStockSamples
LSIC2SD120N80PA120080300240SiC Schottky Diode<1175SOT-227B (miniBLOC)1.5DualYesYesYesSilicon CarbidePower SemiconductorsCheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LSIC2SD120N80PA RoHS No PbFree No
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