LSIC2SD170B50 - LSIC2SD170B50 Series

Littelfuse silicon carbide LSIC2SD170B10 LSIC2SD170B50 LSIC2SD170B25
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The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings.
SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency.
This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C.
These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed.


  • Positive temperature coefficient
  • 175°C maximum operating junction temperature
  • Extremely fast, temperature-independent switching behavior
  • Nearly zero reverse recovery current
  • High surge capability
  • Low RthJC


  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations
To request product environmental information, please complete the Product Environmental Information Request Form.