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Series: N-Channel Depletion-Mode MOSFETs

N-channel depletion mode field effect transistors (FET)
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Depletion Mode MOSFET Devices

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid-state relays for industrial and telecommunications applications.


  • Normally closed with no power applied
  • Low VGS(off) voltage
  • High input impedance
  • Normally closed with no power applied
  • Low VGS(off) voltage
  • High input impedance

N-Channel Depletion-Mode MOSFETs Parts

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