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IXFN27N80Q
DiscMSFT NCh HiPerFET-QCls SOT-227B/mini | Series: Q Class
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.
Advantages:
- Easy assembly
- High Power density
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 800 |
RDS(ON),max @ 25 °C (Ω) | 0.32 |
ID, cont @ 25 °C (A) | 27 |
Gate Charge (nC) | 170 |
RthJC (K/W) | 0.24 |
Configuration | Single |
Package Type | SOT-227 |
CISS (pF) | 7600 |
PD (W) | 521 |
trr,max (ns) | 250 |
- International standard packages
- Rugged polysilicon gate cell structure
- Rated for Unclamped Inductive Load Switching (UIS)
- Fast intrinsic Rectifier
IXFN27N80Q Applications
- Dc-dc converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- Dc choppers
- AC motor control
IXFN27N80Q Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFN27N80Q | DiscMSFT NCh HiPerFET-QCls SOT-227B/mini | View More |
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