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IXTF6N200P3
Disc MSFT N-CH Std-Polar3 I4-PAK ISO+ | Series: Polar3
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.
Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving.
Advantages:
- Easy to mount
- Space savings
- High power density
| Property | Value |
|---|---|
VDSS (V) | 2000 |
RDS(ON),max @ 25 °C (Ω) | 4.2 |
ID, cont @ 25 °C (A) | 4 |
Gate Charge (nC) | 143 |
RthJC (K/W) | 0.58 |
Configuration | Single |
Package Type | I4-PAK |
CISS (pF) | 3700 |
trr,typ (ns) | 520 |
PD (W) | 215 |
- Proprietary high-voltage packages
- High blocking voltage
- Positive temperature coefficient of RDSON
IXTF6N200P3 Applications
- Capacitor discharge circuits
- High voltage power supplies
- Pulse circuits
- Laser and X-ray generation systems
- High voltage relay disconnect circuits
- CT and MRI scanners
- Ultrasound machines
IXTF6N200P3 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTF6N200P3 | Disc MSFT N-CH Std-Polar3 I4-PAK ISO+ | View More |
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