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IXKN45N80C

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IXKN45N80C

DiscMSFT NChSuprJuncC3-Clas SOT227B/mini | Series: C3 Class
info

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.

Advantages:

  • Easy assembly
  • Space savings
  • High power density


(1) CoolMOS™ is a trademark of Infineon Technologies AG.
PropertyValue
VDSS (V)
800
RDS(ON),max @ 25 °C (Ω)
0.074
ID, cont @ 25 °C (A)
44
Gate Charge (nC)
360
RthJC (K/W)
0.33
Configuration
Single
Package Type
SOT-227B (minibloc)
CISS (pF)
9200
trr,typ (ns)
500
PD (W)
380
trr,max (ns)
800
VISOL,RMS (V)
2500
  • Silicon chip on Direct-Copper-Bond substrate
  • 3rd generation CoolMOS™(1) power MOSFET
  • Enhanced total power density
  • Low thermal resistance

IXKN45N80C Applications

Highlights Section

  • Switch mode power supplies
  • Uninterruptible power supplies
  • Power factor correction (PFC)
  • Welding
  • Inductive heating

IXKN45N80C Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXKN45N80CDiscMSFT NChSuprJuncC3-Clas SOT227B/mini

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