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IXTN660N04T4
DiscMSFT NChTrenchGateGen4 SOT-227B(mini | Series: Gen4
These 40V TrenchT4™ Power MOSFETs constitute a new generation of high-current Trench devices. Available at either 270A or 340A current rating, they are optimized for synchronous rectification in switched-mode power conversion applications.
With on-state resistance as low as 1.7 milliohms, these TrenchT4™ devices enable a reduction in the number of MOSFETs needed, especially in synchronous rectification. Paralleling multiple devices may not be necessary due to their high-current carrying capability and high power density, thereby simplifying the power system and improving its reliability at the same time.
Advantages:
- High power density
- Easy to mount
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 40 |
RDS(ON),max @ 25 °C (Ω) | 0.00085 |
ID, cont @ 25 °C (A) | 660 |
Gate Charge (nC) | 860 |
RthJC (K/W) | 0.144 |
Configuration | Single |
Package Type | SOT-227 |
CISS (pF) | 44000 |
trr,typ (ns) | 60 |
PD (W) | 1040 |
- Ultra low on-resistance RDS(on)
- High current handling capability
- Avalanche rated
- 175°C operating temperature
- International standard packages
IXTN660N04T4 Applications
- Synchronous rectification
- High current switching power supplies
- Battery powered electric motors
- Resonant-mode power supplies
- Electronic ballasts
- Class D audio amplifiers
- Electric forklifts
- Cordless power tools
IXTN660N04T4 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTN660N04T4 | DiscMSFT NChTrenchGateGen4 SOT-227B(mini | View More |
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