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DE150-102N02A
DE-150 1000V 2A N-CHANNEL MOSFET TRANS | Series: RF
| Property | Value |
|---|---|
Status | Active |
ID, cont @ 25 °C (A) | 2 |
VGS,off-max (V) | 1000 |
Current Rating (A) | 2 |
PD (W) | 140 |
RDS(ON),max @ 25 °C (Ω) | 9.4 |
Driving Voltages (V) | 4.5 |
Gate Charge (nC) | 23 |
CISS (pF) | 500 |
TJ Max (°C) | 125 |
CRSS (pF) | 3 |
RthJC (K/W) | 0.71 |
VDSS (V) | 1000 |
Voltage Rating (V) | 1000 |
trr,typ (ns) | 710 |
- Low gate charge and capacitances
- 1000 V breakdown voltage
- 9.4 Ω on resistance
- VGS 2.5 V to 4 V turn on
- Tvj(max.) 125 °C
- High-speed switching
- High voltage breakdown
- Low RdsON offering low I²R power losses
- Supports a wide range of control logic
- Operation in high ambient temperatures
DE150-102N02A Applications
- Electron beams
- RF power switch
DE150-102N02A Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| DE150-102N02A | DE-150 1000V 2A N-CHANNEL MOSFET TRANS | View More |
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