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DE150-501N04A
DE-150 500V 4A N-CHANNEL MOSFET TRANS | Series: RF
500 V, RF Power MOSFET, 1.5 Ω RDS-on
| Property | Value |
|---|---|
Status | Active |
ID, cont @ 25 °C (A) | 4.5 |
VGS,off-max (V) | 500 |
Current Rating (A) | 4.5 |
Typical On-Resistance (mΩ) | 1200 |
PD (W) | 125 |
RDS(ON),max @ 25 °C (Ω) | 1.5 |
Driving Voltages (V) | 4 |
Gate Charge (nC) | 14 |
CISS (pF) | 570 |
TJ Max (°C) | 125 |
CRSS (pF) | 3 |
RthJC (K/W) | 0.74 |
VDSS (V) | 500 |
Voltage Rating (V) | 500 |
- Low gate charge and capacitances
- 500 V breakdown voltage
- 1.5 Ω on resistance
- VGS 2.5 V to 4 V turn on
- Tvj(max.) 125 °C
- High-speed switching
- High voltage breakdown
- Low RdsON offering low I²R power losses
- Supports a wide range of control logic
- Operation in high ambient temperatures
DE150-501N04A Applications
- Electron beams
- RF power in Plasma Technology
- Industrial 3D Metal Printers
- Scientific Instrumentation
- High Frequency DC-DC Converter
DE150-501N04A Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| DE150-501N04A | DE-150 500V 4A N-CHANNEL MOSFET TRANS | View More |
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