IXSJ25N120R1K

Power electronic systems require efficient semiconductor devices with high power density and low losses. Traditional silicon-based MOSFETs often face challenges with higher losses and limited power density. The Littelfuse 1200 V SiC MOSFET, available in 62 mΩ, rated at 28 A in ISO-247-4L package, addresses these issues. The high performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance from junction-to-heatsink while remaining compatible with industry standard footprint. These SiC MOSFETs are engineered to reduce the on-state resistance, and minimize the power losses, while maintaining excellent switching performance. This makes them ideal for high-frequency, and high-efficiency power-management applications like DC/DC converter, switch mode power supplies, induction heating, motor drives and EV charging infrastructures.