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DCK20I1200PC
SiC Diode in TO263-2L | Series: SiC Schottky Diodes
| Property | Value |
|---|---|
VRRM (V) | 1200 |
IF(AV) | 20 |
Peak Forward Surge Current IFSM (A) | 155 |
QC (nC) | 94 |
TJ Max (°C) | 175 |
Vf (V) | 1.48 |
Configuration | Single |
AEC-Q101 Qualified | No |
- High surge current capacity
- Extremely short reverse recovery time
- Extremely fast, temperature-independent switching behaviour
- Zero reverse recovery current
- Low forward voltage drop
- Maximum virtual junction temperature of 175 ⁰C
- Improved operational reliability under transient events
- Suitable for high frequency switching applications
- Reduced thermal management effort
- Increased system power density
- Improved system efficiency
- Enhanced performance in high temperature environments
DCK20I1200PC Applications
- PV inverters
- Switch mode power supplies
- Power factor correction
- Battery chargers
- Telecom / Server SMPS
- Battery-powered portable devices
DCK20I1200PC Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHCs) Declaration | REACH (SVHCs) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| DCK20I1200PC | SiC Diode in TO263-2L | View More |
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