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LSIC2SD120N40PA
1200V/40A SiC SBD in SOT-227 | Series: SiC Schottky Diodes
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
| Property | Value |
|---|---|
VRRM (V) | 1200 |
IF(AV) | 20 |
Peak Forward Surge Current IFSM (A) | 145 |
QC (nC) | 125 |
TJ Max (°C) | 175 |
Package Type | SOT-227 |
Reverse Current IR (µA) | <1 |
Vf (V) | 1.5 |
Configuration | Dual |
Qualification_Diode | Industrial |
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Excellent surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses compared to Si bipolar diodes
- Zero reverse recovery current
- Copper base plate with AlN isolation for low thermal resistance
- Isolation voltage: 3000 V
- UL Recognized under File E72873
LSIC2SD120N40PA Applications
- Boost diodes in PFC or DC/DC stages
- Switch-mode power supplies
- Solar inverters
- Uninterruptable power supplies
- Industrial motor drives
- Battery Chargers
- High speed rectifier
LSIC2SD120N40PA Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LSIC2SD120N40PA | 1200V/40A SiC SBD in SOT-227 | View More |
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