IXFN210N30X3 - X3-Class Series

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Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry.

With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.

Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.

Features:

  • Lowest on-resistance RDS(ON)
    and gate charge Qg
  • Fast soft recovery body diode
  • dv/dt ruggedness
  • Superior avalanche capability
  • International standard packages

 

Applications:

  • Battery chargers for light electric vehicles
  • Synchronous rectification in switching
    power supplies
  • Motor control
  • DC-DC converters
  • Uninterruptible power supplies
  • Electric forklifts
  • Class-D audio amplifiers
  • Telecom systems

 

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