T0425VC33G - Capsule Type Series

Series: Capsule Type
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W67
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As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.


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Literature

Use of PP-IGBTs in VSC Medium Voltage Drives Application

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Property (Mouseover for details) Value
VCES - Collector-Emitter Voltage (V) 3300
Collector Current (A) 425
Maximum Repetitive Peak Collector Current (A) 850
VCE(sat) - Collector-Emitter Saturation Voltage (V) 3.4
Turn-on Energy (J) 1.1
Turn-off Energy (J) 1.12
Use With Device C0044BG400SCH
TJ Max (°C) 125
Package Type W67
Forward Voltage Drop VF (V) 3.0
Max Reverse Recovery Current 305
Typical Reverse Recovery Time (µs) 1.7
Reverse Recovery Charge (µC) 440
Thermal resistance [junction-heat sink] [IGBT] (K/W) 0.0364
Thermal resistance [junction-heat sink] [Diode] (K/W) 0.0576
Sample Request No
Check Stock No
Partner ECAD Models T0425VC33G

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