MMIX1H60N150V1 - MOS Gated Thyristor Series

External overview image
Roll Over to Zoom
Disclaimer Notice

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

  • Designed for high-power pulse and capacitive discharge applications 
  • Switched on by a voltage applied at the gate terminal (MOS structure) 
  • Capable of carrying current up to 32kA for a period of 1 microsecond 
  • High power densities 
  • Low gate drive requirements
  • Available in proprietary packages: Product Line Introduction (1500V MOS-Gated Thyristors) 
    • surface mountable SMPD and Mini-SMPD
    • high-voltage versions of the international standard TO-247: TO-247HV and TO-247PLUS-HV 
Property (Mouseover for details) Value
Status Active
VDM 1500
ITSM1TC25C 32
ITSM10TC25C 11.8
VT 7.5
Slope Resistance Thyristor mOhm 1.2
Qg 180
triTC25C 100
VGK th 5
Co packDiode Yes
Sample Request Yes
Package Type SMPD
To request product environmental information, please complete the Product Environmental Information Request Form.