IXXP12N65B4 - Trench Series

Series: Trench
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TO-220
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Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).

These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.

Features:

  • Low VCE(sat), low Eon/Eoff
  • Optimized for medium and high switching frequencies 10 kHz up to 60kHz
  • High surge current capability and short circuit capability
  • Square Reverse Bias Safe Operating Areas (RBSOA)
  • Positive thermal coefficient of VCE(sat)

Applications:

  • Battery Chargers
  • Lamp Ballasts
  • Motor Drives
  • Power Inverters
  • Welding Machines

Advantages:

  • Hard-switching capable
  • High power densities
  • Sonic Diodes with temperature stability of diode forward voltage VF
  • Reduced gate drive requirements
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