IXYN110N120B4H1 - Trench Series

Series: Trench
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Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.

These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losse

Features:

  • Low Vcesat, low Eon/Eoff
  • High surge current capability and short circuit capability
  • Positive thermal coefficient of Vcesat

Applications:

  • Battery Chargers
  • Lamp Ballast
  • Motor Drives
  • Power Inverters
  • Welding Machines

Advantages:

  • Hard-switching capabilities
  • High power densities
  • Temperature stability of diode forward voltage VF
  • Low gate drive requirements
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