LGB8207TH - LGB8207TH Series

LGB8207TH
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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Ideal for Coil-on-Plug and Driver-on-Coil Applications
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Gate Resistor (RG) = 70 Ω

Applications:

  • Ignition Systems

End Products:

  • Automotive
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LGB8207TH Ignition IGBT, N-Channel, 20 A, 365 V RoHS No 08/15/2016 PbFree No 09/12/2018
09/12/2018
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