LGD18N45TH - LGD18N45TH Series

LGD18N45TH
Roll Over to Zoom

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • DPAK Package Offers Smaller Footprint and Increased Board Space
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated Gate-Emitter ESD Protection
  • Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Emitter Ballasting for Short-Circuit Protection
  • This is a Pb-Free Device

Applications:

  • Ignition Systems

End Products:

  • Automotive
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LGD18N45TH Ignition IGBT 18A,450V RoHS No 08/15/2016 PbFree No 08/15/2016
08/15/2016
If the product environmental information that you are looking for does not appear in this tab,
please complete the Product Environmental Information Request Form.