LSIC1MO120E0080 Series - Enhancement-mode SiC MOSFET, 1200 V, 80 mOhm, N-channel

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Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package.

 

Features:

  • Optimized for high frequency, high-efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency switching
  • Normally-off operation at all temperatures
  • Ultra-low on-resistance

Applications:

  • Solar Inverters
  • Switch Mode Power Supplies
  • UPS systems, Motor Drives
  • High Voltage DC/DC Converters
  • Battery Chargers and Induction Heating

Access specifications, certifications, check availability and order parts below

Catalog #Voltage Rating (V)Typical On-Resistance (mOhm)Current Rating (A)Gate Charge (nC)ConfigurationStatusDriving Voltages (V)Switching Energy (uJ)RoHSTJ Max (°C)Check StockPartner ECAD ModelsStockSamples
LSIC1MO120E00801200802592N-ChannelActive20/-5252Yes175YesLSIC1MO120E0080CheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s) IPC-Material Declaration
LSIC1MO120E0080 1200V/80mohm SiC MOSFET TO-247-3L RoHS No 07/17/2020 PbFree No 07/17/2020 CoC_RoHS9_LSIC1MO120E0080 REACH209_Declaration_Contain-_LSIC1MO120E0080 Yes
07/17/2020
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