LSIC1MO120E0160 Series - Enhancement-mode SiC MOSFET, 1200 V, 160 mOhm, N-channel

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Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package.

Features:

  • Optimized for high frequency, high-efficiency applications
  • Extremely low gate charge and output capacitance
  • Low gate resistance for high-frequency switching
  • Normally-off operation at all temperatures
  • Ultra-low on-resistance

Applications:

  • Solar Inverters
  • Switch Mode Power Supplies
  • UPS
  • Motor Drives
  • High Voltage DC/DC Converters
  • Induction Heating

Access specifications, certifications, check availability and order parts below

Catalog #Voltage Rating (V)Typical On-Resistance (mOhm)Current Rating (A)Gate Charge (nC)ConfigurationPackage TypeDriving Voltages (V)Switching Energy (uJ)RoHSTJ Max (°C)SamplesCheck StockPartner ECAD ModelsStockSamples
LSIC1MO120E016012001601457N-ChannelTO-247-3L20/-5136Yes150YesYesLSIC1MO120E0160CheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LSIC1MO120E0160 1200V/160mohm SiC MOSFET TO-247-3L RoHS No 08/02/2021 PbFree No 08/02/2021 CoC_RoHS9_LSIC1MO120E0160_8-2-2021 Yes
08/02/2021
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