LSIC2SD065C06A Series - 650 V, 6 A SiC Schottky Barrier Diode in TO-252-2L

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This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. 


Features:

  • AEC-Q101 qualified 
  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes 

 Applications:

  • Boost diodes in PFC or DC/DC stages 
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #Forward Continuous Current IF (A)VF (V)Reverse Current IR (µA)Peak Forward Surge Current IFSM (A)Package TypeConfigurationSizeRoHSPublic part (Yes/No)Data Sheet (Yes/No)ProductGroupSBUTechnologyStockSamples
LSIC2SD065C06A61.5132TO-252-2LSingleTO-252-2LYesYesYesSchottky Diode DiscretesSBUSiC schottky diodeCheckOrder