LSIC2SD065C20A Series - 650 V, 20 A SiC Schottky Barrier Diode in TO-252-2L

Roll Over to Zoom

▶ Click here to request a sample


This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. 


Features:

  • AEC-Q101 qualified 
  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

 Applications:

  • Boost diodes in PFC or DC/DC stages 
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #Forward Continuous Current IF (A)Peak Forward Surge Current IFSM (A)TechnologyReverse Current IR (µA)Package TypeVf (V)ConfigurationSizeRoHSPublic part (Yes/No)Data Sheet (Yes/No)ProductGroupSBUStockSamples
LSIC2SD065C20A2095SiC schottky diode1TO-252-2L1.5SingleTO-252-2LYesYesYesSchottky Diode DiscretesSBUCheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LSIC2SD065C20A RoHS No PbFree No
If the product environmental information that you are looking for does not appear in this tab,
please complete the Product Environmental Information Request Form.