LSIC2SD065D10A Series - 650 V, 10 A SiC Schottky Barrier Diode in TO-263-2L

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This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • AEC-Q101 qualified
  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

Applications:

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)Peak Forward Surge Current IFSM (A)QC (nC)TechnologyReverse Current IR (µA)TJ Max (°C)Package TypeVf (V)IF(AV)ConfigurationSizeMountingRoHSPublic part (Yes/No)Data Sheet (Yes/No)StockSamples
LSIC2SD065D10A6504830SiC Schottky Diode50175TO263-2L1.510SingleTO263-2LSurface MountYesYesYesCheckOrder