LSIC2SD065E12CCA Series - 650 V, 12 A SiC Schottky Barrier Diode in TO-247-3L

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This series of silicon carbide (SiC) Schottky diodes has neg¬ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • AEC-Q101 qualified 
  • Positive temperature coefficient for safe operation and ease of paralleling 
  • 175 °C maximum operating junction temperature
  • Excellent surge capability 
  • Extremely fast, temperature-independent switching behavior 
  • Dramatically reduced switching losses compared to Si bipolar diodes
Applications:
  • Boost diodes in PFC or DC/DC stages 
  • Switch-mode power supplies 
  • Uninterruptible power supplies 
  • Solar inverters 
  • Industrial motor drives 
  • EV charging stations

Access specifications, certifications, check availability and order parts below

Catalog #VRRM(V)Forward Voltage Drop VF (V)Reverse Current IR (µA)Peak Forward Surge Current IFSM (A)QC (nC)Package TypeTJ Max (°C)ConfigurationIF(AV)SizeMountingRoHSPublic part (Yes/No)Data Sheet (Yes/No)ProdCategoryProductGroupSBUTechnologyStockSamples
LSIC2SD065E12CCA6501.5503220TO247-3L175Common Cathode12TO247-3LThrough HoleYesYesYesSilicon CarbidePower SemiconductorsYesSiC Schottky DiodeCheckOrder