LSIC2SD120C05 Series - GEN2 SiC Schottky Diode,1200 V, 5 A, TO-252-2L (DPAK)

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This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.

Features:

  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes

Applications:

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations
  • Inductive cooking fields

Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)Peak Forward Surge Current IFSM (A)QC (nC)TechnologyReverse Current IR (µA)TJ Max (°C)Package TypeVf (V)IF(AV)ConfigurationSizeMountingRoHSPublic part (Yes/No)Data Sheet (Yes/No)StockSamples
LSIC2SD120C0512004030SiC Schottky Diode100175TO252-2L1.518.1SingleTO252-2LSurface MountYesYesYesCheckOrder