This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features:
- Ideal for Coil-on-Plug Applications
- New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated Gate-Emitter ESD Protection
- Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor and Gate-Emitter Resistor
Applications:
End Products: