LGB18N40ATH - LGB18N40ATH Series

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Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Ideal for Coil-on-Plug Applications
  • New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated Gate-Emitter ESD Protection
  • Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor and Gate-Emitter Resistor

Applications:

  • Ignition Systems

End Products:

  • Automotive
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