LGB18N40ATH - LGB18N40ATH Series

LGB18N40ATH
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This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features:

  • Ideal for Coil-on-Plug Applications
  • New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated Gate-Emitter ESD Protection
  • Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor and Gate-Emitter Resistor

Applications:

  • Ignition Systems

End Products:

  • Automotive
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LGB18N40ATH Ignition IGBT, N-Channel, 18 A, 400 V RoHS No 08/15/2016 PbFree No 09/12/2018
09/12/2018
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