LSIC2SD120N120PA Series - GEN2 SiC Schottky Diode LSIC2SD120N120PA, 1200 V, 2x60 A, SOT-227B (miniBLOC)

Roll Over to Zoom

This series of silicon carbide (SiC) Schottky diodes has negligible
reverse recovery current, high surge capability, and a
maximum operating junction temperature of 175 °C. These
diodes series are ideal for applications where improvements
in efficiency, reliability, and thermal management are desired.


  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes
  • Zero reverse recovery current
  • Copper base plate with AlN isolation for low thermal resistance
  • Isolation voltage: 3000 V
  • UL Recognition Pending under File E72873


  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptable power supplies
  • Industrial motor drives
  • Battery Chargers
  • High speed rectifier

Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)Peak Forward Surge Current IFSM (A)QC (nC)TJ Max (°C)Package TypeForward Continuous Current IF (A)TechnologyReverse Current IR (µA)Vf (V)ConfigurationRoHSPublic part (Yes/No)Data Sheet (Yes/No)ProdCategoryProductGroupStockSamples
LSIC2SD120N120PA1200440368175SOT-227B (miniBLOC)120SiC Schottky Diode<11.5DualYesYesYesSilicon CarbidePower SemiconductorsCheckOrder
Part # Part Description RoHS Pb-free RoHS (2015/ 863/EU) Certificate REACH (SVHC’s) Declaration Halogen Free REACH (SVHC’s)
LSIC2SD120N120PA RoHS No PbFree No
If the product environmental information that you are looking for does not appear in this tab,
please complete the Product Environmental Information Request Form.