LSIC2SD120N120PA - GEN2 SiC Schottky Diode LSIC2SD120N120PA, 1200 V, 2x60 A, SOT-227B (miniBLOC) Series

Littelfuse power semiconductor silicon carbide LSIC2SD120NxxPA
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This series of silicon carbide (SiC) Schottky diodes has negligible
reverse recovery current, high surge capability, and a
maximum operating junction temperature of 175 °C. These
diodes series are ideal for applications where improvements
in efficiency, reliability, and thermal management are desired.


  • Positive temperature coefficient for safe operation and ease of paralleling
  • 175 °C maximum operating junction temperature
  • Excellent surge capability
  • Extremely fast, temperature-independent switching behavior
  • Dramatically reduced switching losses compared to Si bipolar diodes
  • Zero reverse recovery current
  • Copper base plate with AlN isolation for low thermal resistance
  • Isolation voltage: 3000 V
  • UL Recognition Pending under File E72873


  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptable power supplies
  • Industrial motor drives
  • Battery Chargers
  • High speed rectifier
To request product environmental information, please complete the Product Environmental Information Request Form.